BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 7

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
BLF888
Product data sheet
Fig 8.
PAR
(dB)
9.5
8.5
7.5
6.5
5.5
400
P
common source broadband test circuit as described in
Section
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
L(AV)
= 110 W; V
7.2.2 DVB-T
500
8.
7.3 Impedance information
PAR
η
D
Table 8.
Simulated Z
600
f
MHz
300
325
350
375
400
425
450
475
500
DS
Fig 10. Definition of transistor impedance
= 50 V; I
700
Dq
i
Typical push-pull impedance
and Z
= 1.3 A; measured in a
800
All information provided in this document is subject to legal disclaimers.
001aak647
L
f (MHz)
device impedance; impedance info at V
900
Rev. 5 — 21 January 2011
50
40
30
20
10
(%)
η
D
Z

1.018  j1.350
1.045  j1.022
1.076  j0.722
1.110  j0.444
1.148  j0.183
1.190 + j0.064
1.238 + j0.299
1.291 + j0.526
1.351 + j0.746
i
Fig 9.
Z
i
(dB)
G
p
22
18
14
10
gate
6
400
P
common source broadband test circuit as described in
Section
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
L(AV)
001aai086
drain
= 110 W; V
500
8.
Z
L
IMD
DS
G
p
= 50 V and P
shldr
600
DS
UHF power LDMOS transistor
= 50 V; I
Z

5.565 + j0.747
5.435 + j0.752
5.303 + j0.746
5.167 + j0.730
5.030 + j0.704
4.892 + j0.668
4.754 + j0.622
4.617 + j0.567
4.481 + j0.504
L
700
Dq
L(PEP)
= 1.3 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
001aak648
BLF888
f (MHz)
= 600 W (DVB-T).
900
−10
−20
−30
−40
−50
IMD
(dB)
7 of 17
shldr