BLF871S,112 NXP Semiconductors, BLF871S,112 Datasheet - Page 10

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BLF871S,112

Manufacturer Part Number
BLF871S,112
Description
TRANSISTOR RF PWR LDMOS SOT467B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF871S,112

Transistor Type
LDMOS
Frequency
860MHz
Gain
21dB
Voltage - Rated
89V
Current Rating
20A
Current - Test
500mA
Voltage - Test
40V
Power - Output
100W
Package / Case
SOT467B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5105-5
934063502112
BLF871S,112
NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
7.5 Reliability
Table 8.
Simulated Z
f
(MHz)
925
950
975
1000
Fig 13. Electromigration (I
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
1
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
Typical impedance
i
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
0
and Z
(7) (8) (9) (10) (11)
L
device impedance; impedance info at V
Rev. 04 — 19 November 2009
DS(DC)
…continued
Z
(Ω)
1.004 + j0.459
1.005 + j0.540
1.007 + j0.619
1.009 + j0.696
i
)
2
(1) (2) (3) (4) (5) (6)
BLF871; BLF871S
DS
4
= 42 V.
UHF power LDMOS transistor
Z
(Ω)
2.456 + j2.455
2.378 + j2.388
2.303 + j2.320
2.230 + j2.250
L
I
DS(DC)
(A)
© NXP B.V. 2010. All rights reserved.
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