BLF871S,112 NXP Semiconductors, BLF871S,112 Datasheet - Page 9

• Manufacturer Part Number: BLF871S,112
• Description: TRANSISTOR RF PWR LDMOS SOT467B
• Manufacturer: NXP Semiconductors

Specifications of BLF871S,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 21dB
• Voltage - Rated: 89V
• Current Rating: 20A
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Package / Case: SOT467B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5105-5; 934063502112; BLF871S,112

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
7.3 Ruggedness in class-AB operation
7.4 Impedance information
The BLF871 and BLF871S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power.
Table 8.
Simulated Z
f
(MHz)
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
Fig 12. Definition of transistor impedance
Typical impedance
i
and Z
L
device impedance; impedance info at V
Rev. 04 — 19 November 2009
Z
(Ω)
0.977 − j3.327
0.977 − j2.983
0.978 − j2.681
0.979 − j2.414
0.979 − j2.174
0.980 − j1.956
0.981 − j1.758
0.982 − j1.576
0.982 − j1.407
0.983 − j1.250
0.984 − j1.103
0.985 − j0.964
0.986 − j0.834
0.987 − j0.709
0.988 − j0.591
0.990 − j0.478
0.991 − j0.370
0.992 − j0.266
0.993 − j0.165
0.995 − j0.068
0.996 + j0.026
0.997 + j0.117
0.999 + j0.206
1.000 + j0.292
1.002 + j0.376
i
Z
i
gate
001aai086
drain
BLF871; BLF871S
Z
L
DS
= 42 V.
UHF power LDMOS transistor
Z
(Ω)
5.506 + j1.774
5.366 + j1.858
5.223 + j1.930
5.078 + j1.990
4.932 + j2.040
4.786 + j2.079
4.640 + j2.108
4.495 + j2.128
4.352 + j2.138
4.212 + j2.140
4.074 + j2.135
3.940 + j2.122
3.809 + j2.102
3.682 + j2.077
3.558 + j2.045
3.438 + j2.009
3.323 + j1.968
3.211 + j1.923
3.103 + j1.874
3.000 + j1.822
2.900 + j1.766
2.804 + j1.708
2.711 + j1.648
2.623 + j1.586
2.538 + j1.521
L
DS
= 42 V;
© NXP B.V. 2010. All rights reserved.
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