BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 7

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
f = 175 MHz; T
Fig.9
Class-B operation; V
f = 175 MHz; T
Fig.11 Power gain and efficiency as functions of
(dB)
(dB)
G p
G p
20
10
20
10
0
0
10
0
Power gain and efficiency as functions of
load power; typical values.
load power; typical values.
h
h
= 25 C; R
= 25 C; R
20
DS
DS
= 28 V; I
= 12.5 V; I
th mb-h
th mb-h
G p
D
DQ
30
10
= 0.3 K/W.
= 0.3 K/W.
DQ
= 50 mA;
= 50 mA;
P L (W)
G p
40
D
P L (W)
MGP172
MGP173
50
20
100
50
0
100
50
0
(%)
(%)
D
D
7
handbook, halfpage
handbook, halfpage
Class-B operation; V
f = 175 MHz; T
Fig.10 Load power as a function of input power;
Class-B operation; V
f = 175 MHz; T
Fig.12 Load power as a function of input power;
(W)
(W)
P L
P L
20
10
60
50
40
30
20
10
0
0
0
typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
0.6
0.6
DS
DS
= 28 V; I
= 12.5 V; I
th mb-h
th mb-h
DQ
1.2
1.2
= 0.3 K/W.
= 0.3 K/W.
DQ
= 50 mA;
= 50 mA;
Product specification
1.8
1.8
P IN (W)
P IN (W)
BLF245
MEA737
MEA736
2.4
2.4