BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 3

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 02
handbook, halfpage
V
V
I
P
T
T
R
R
D
SYMBOL
SYMBOL
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
(A)
I D
10
mb
1
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink T
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
V DS (V)
(2)
DSon
.
MRA921
10
2
3
V
V
T
mb
GS
DS
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
= 0
= 0
P tot
(W)
25 C
T
100
80
60
40
20
mb
mb
CONDITIONS
0
0
= 25 C; P
= 25 C; P
CONDITIONS
Fig.3 Power derating curves.
40
tot
tot
= 68 W
= 68 W
(2)
(1)
80
MIN.
65
VALUE
Product specification
2.6
0.3
120
65
6
68
150
200
T h ( C)
MAX.
20
BLF245
MGP167
160
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT