BF1211,215 NXP Semiconductors, BF1211,215 Datasheet - Page 7

• Manufacturer Part Number: BF1211,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1211,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 29dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1959-2; 934057516215; BF1211

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.9
Fig.11 Drain current as a function of gate 1 (V
V
T
V
(1) R
(2) R
(3) R
(mA)
(mA)
j
DS
G2-S
I D
I D
= 25 C.
= 5 V; V
20
16
12
20
16
12
8
4
0
= 4 V; T
8
4
0
G1
G1
G1
0
0
= 47 k.
= 56 k.
= 68 k.
Drain current as a function of gate 1 current;
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C; R
= 4 V.
10
(4) R
(5) R
(6) R
2
G1
20
connected to V
G1
G1
G1
= 75 k.
= 82 k.
= 100 k.
30
4
(1)
GG
V GG = V DS (V)
; see Fig.21.
(7) R
40
I G1 (μA)
(2)
(3)
(4)
(5)
(6)
(7)
MDB835
MDB833
G1
= 120 k.
50
6
GG
)
7
handbook, halfpage
handbook, halfpage
V
R
Fig.10 Drain current as a function of gate 1 supply
Fig.12 Drain current as a function of gate 2
V
(1) V
(2) V
(3) V
(mA)
(mA)
DS
G1
DS
I D
I D
= 5 V; V
= 75 k (connected to V
= 5 V; T
16
12
20
16
12
8
4
0
8
4
0
GG
GG
GG
BF1211; BF1211R; BF1211WR
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage (V
voltage; typical values.
G2-S
j
= 25 C; R
= 4 V; T
1
GG
G1
j
2
= 25 C.
= 75 k (connected to V
); typical values.
2
GG
); see Fig.21.
(4) V
(5) V
3
4
GG
GG
Product specification
= 3.5 V.
= 3 V.
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
4
V GG (V)
GG
MDB834
MDB836
); see Fig.21.
5
6