BF1211,215 NXP Semiconductors, BF1211,215 Datasheet - Page 4

• Manufacturer Part Number: BF1211,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1211,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 29dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 2dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/1.1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1959-2; 934057516215; BF1211

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2003 Dec 16
handbook, halfpage
V
V
V
V
V
V
V
I
I
I
SYMBOL
j
DSX
G1-S
G2-S
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
N-channel dual-gate MOS-FETs
(mW)
(1) BF1211WR.
(2) BF1211; BF1211R.
P tot
G1
250
200
150
100
50
0
connects G
0
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
Fig.4 Power derating curve.
50
1
to V
PARAMETER
GG
100
= 5 V.
(2)
(1)
150
T s (°C)
MDB828
200
V
V
V
V
V
V
V
V
note 1
V
V
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
= V
= V
= V
= V
= V
= 4 V; V
= 5 V; V
= 4 V; V
= V
= V
4
G2-S
DS
DS
DS
DS
DS
DS
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; V
= 0 V; V
CONDITIONS
= 0 V; I
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; R
BF1211; BF1211R; BF1211WR
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
D
= 10 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
D
D
= 5 V
= 4 V
G1
= 100 A
= 100 A
= 75 k;
6
6
6
0.5
0.5
0.3
0.35
11


MIN.
Product specification

10
10
1.5
1.5
1
1
19
50
20
MAX.
V
V
V
V
V
V
V
mA
nA
nA
UNIT