IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR18N15DTRPBF
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15DTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
6
TOP
BOTTOM
T = 175 C
J
V
V
DS
7
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T = 25 C
GS
J
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
8
1
9
6.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
10
= 50V
°
11
100
12
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
18A
DS
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
T = 175 C
J
6.0V
10
°
V
°
GS
=
10V
3
100