IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR18N15DTRPBF
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15DTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
2
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θJA
θJA
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
4.2
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.17
1160 –––
–––
––– 0.125
–––
–––
–––
–––
––– -100
–––
900
190
–––
–––
–––
130
660
7.6
8.8
9.8
28
14
25
15
49
88
95
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
190
980
5.5
1.3
25
43
11
21
18
72
V/°C
µA
nA
nC
ns
pF
nC
ns
V
Ω
V
S
V
Typ.
Typ.
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 11A
= 11A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „
= 75V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 11A, V
= 11A
= 250µA
= 11A
= 11A
GS
GS
= 0V to 120V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
200
110
1.4
11
11
50
= 0V, T
= 0V
www.irf.com
D
GS
= 1mA †
„
J
= 0V „
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)