IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 11

• Manufacturer Part Number: IRFR18N15DTRPBF
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15DTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/