BUK9640-100A,118 NXP Semiconductors, BUK9640-100A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9640-100A,118
• Description: MOSFET N-CH 100V 39A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 39 A
• Power Dissipation: 158000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056025118; BUK9640-100A /T3; BUK9640-100A /T3

NXP Semiconductors
BUK9640-100A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
DD
= 14 (V)
20
40
(A)
I
V
S
100
DD
80
60
40
20
0
= 80 (V)
Q
0
All information provided in this document is subject to legal disclaimers.
G
(nC)
03na63
T
j
= 175 °C
60
0.5
Rev. 04 — 31 May 2010
1.0
Fig 14. Input, output and reverse transfer capacitances
(pF)
T
6000
C
5000
4000
3000
2000
1000
j
= 25 °C
1.5
0
10
as a function of drain-source voltage; typical
values
−2
V
SD
03na62
(V)
N-channel TrenchMOS logic level FET
C
C
C
2.0
rss
iss
oss
10
−1
BUK9640-100A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na68
(V)
10
2
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