BUK9640-100A,118 NXP Semiconductors, BUK9640-100A,118 Datasheet

MOSFET N-CH 100V 39A D2PAK

BUK9640-100A,118

Manufacturer Part Number
BUK9640-100A,118
Description
MOSFET N-CH 100V 39A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9640-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
158W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.039 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
39 A
Power Dissipation
158000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056025118
BUK9640-100A /T3
BUK9640-100A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
BUK9640-100A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
V
T
see
j
mb
j
j
j
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C;
Figure
Figure
= 25 °C; see
= 5 V; T
= 4.5 V; I
= 10 V; I
= 5 V; I
1; see
11; see
D
mb
j
D
≤ 175 °C
= 25 A;
D
= 25 A;
= 25 °C;
= 25 A;
Figure 2
Figure 3
Figure 12
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
29
34
Max Unit
100
39
158
43
39
40
V
A
W
mΩ
mΩ
mΩ

Related parts for BUK9640-100A,118

BUK9640-100A,118 Summary of contents

Page 1

... BUK9640-100A N-channel TrenchMOS logic level FET Rev. 04 — 31 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... DS see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET Min ≤ 100 sup = °C; j Graphic symbol ...

Page 3

... sup = 50 Ω j(init) unclamped 03nh74 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET Min Typ - - - - - Figure - ° 100 150 Normalized total power dissipation as a function of mounting base temperature © ...

Page 4

... BUK9640-100A Product data sheet / Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET 03nh72 = 10 μ 100 μ 100 (V) DS Min Typ ...

Page 5

... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1 ...

Page 6

... GS DS 03na66 = 10 (V) R 3.0 2 (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 7

... GS 3.2 3.4 3.6 4.0 5 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 junction temperature 2 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03na62 = 25 °C 1.5 2 ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9640-100A separated from data sheet BUK95_9640_100A-03. BUK95_9640_100A-03 20020208 BUK9640-100A Product data sheet ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9640-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 May 2010 Document identifier: BUK9640-100A ...

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