BUK9640-100A,118 NXP Semiconductors, BUK9640-100A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9640-100A,118
• Description: MOSFET N-CH 100V 39A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 39 A
• Power Dissipation: 158000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056025118; BUK9640-100A /T3; BUK9640-100A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9640-100A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
1
1
−1
−2
−3
3
2
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
−6
Thermal characteristics
0.2
0.1
0.05
δ = 0.5
0.02
Single Shot
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
R
DSon
10
−5
= V
DS
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
mounted on a printed-circuit board ;
minimum footprint
10
10
DC
−4
Figure 4
Rev. 04 — 31 May 2010
10
−3
10
10
N-channel TrenchMOS logic level FET
−2
2
100 ms
1 ms
10 ms
t
100 μs
p
= 10 μs
BUK9640-100A
Min
-
-
10
P
V
−1
DS
Typ
-
50
t
(V)
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s)
δ =
Max
0.95
-
03nh72
03nh73
T
t
t
p
10
1
3
Unit
K/W
K/W
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