NTHC5513T1G ON Semiconductor, NTHC5513T1G Datasheet - Page 6

• Manufacturer Part Number: NTHC5513T1G
• Description: MOSFET N/P-CH 20V 2.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHC5513T1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHC5513T1GOS; NTHC5513T1GOS; NTHC5513T1GOSTR

0.5
0.4
0.3
0.2
0.1
0
4
3
2
1
0
1
1.6
1.4
1.2
0.8
0.6
0
Figure 13. On−Resistance vs. Gate−to−Source
1
−50
−V
−V
I
V
Figure 11. On−Region Characteristics
D
1
GS
DS
GS
−25
= −2.1 A
Figure 15. On−Resistance Variation with
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
= −4.5 V
−2.2 V
−T
V
V
2
GS
GS
J
0
, JUNCTION TEMPERATURE ( C)
= −2.4 V
= −6 V to −3 V
3
3
Voltage
25
Temperature
4
TYPICAL P−CHANNEL PERFORMANCE CURVES
50
4
5
−1.8 V
−1.2 V
−1.6 V
−1.4 V
−2 V
75
I
T
D
6
J
= −2.1 A
(T
= 25 C
5
100
T
J
J
= 25 C unless otherwise noted)
= 25 C
7
http://onsemi.com
125
NTHC5513
6
8
150
6
10000
0.225
0.175
0.125
1000
0.25
0.15
100
0.2
0.1
10
4
3
2
1
0
0.5
0.5
2
V
Figure 14. On−Resistance vs. Drain Current
V
T
Figure 16. Drain−to−Source Leakage Current
GS
J
DS
−V
−V
= 25 C
4
= 0 V
DS
GS
Figure 12. Transfer Characteristics
25 C
−10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
−I
6
D,
T
C
1.5
DRAIN CURRENT (AMPS)
= −55 C
and Gate Voltage
V
8
GS
V
1.5
= −2.5 V
GS
T
T
vs. Voltage
10
100 C
J
J
= −4.5 V
= 150 C
= 100 C
12
2.5
2
14
16
2.5
3.5
18
20
3