NTHC5513T1G ON Semiconductor, NTHC5513T1G Datasheet

NTHC5513T1G

Manufacturer Part Number

NTHC5513T1G

Description

MOSFET N/P-CH 20V 2.1A CHIPFET

Manufacturer

ON Semiconductor

Datasheet

1.NTHC5513T1G.pdf (10 pages)

Specifications of NTHC5513T1G

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 2.9A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

2.9A, 2.2A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

4nC @ 4.5V

Input Capacitance (ciss) @ Vds

180pF @ 10V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTHC5513T1GOS
NTHC5513T1GOS
NTHC5513T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHC5513T1G

Manufacturer:

ON Semiconductor

Quantity:

2 200

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHC5513T1G

Manufacturer:

Quantity:

56 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTHC5513T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 10
Download datasheet (81Kb)

NTHC5513

Power MOSFET

20 V, +3.9 A / −3.0 A,

Complementary ChipFETt

Features

Applications

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

October, 2004 − Rev. 4

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Pulsed Drain Current

(Note 1)

Power Dissipation

(Note 1)

Operating Junction and Storage

Temperature

Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)

Larger Packages

Environments Such as Portable Electronics

Powered Products

Complementary N−Channel and P−Channel MOSFET

Small Size, 40% Smaller than TSOP−6 Package

Leadless SMD Package Featuring Complementary Pair

ChipFET Package Provides Great Thermal Characteristics Similar to

Low R

Low Profile (< 1.10 mm) Allows Placement in Extremely Thin

Pb−Free Package is Available

Load Switch Applications Requiring Level Shift

DC−DC Conversion Circuits

Drive Small Brushless DC Motors

Designed for Power Management Applications in Portable, Battery

Semiconductor Components Industries, LLC, 2004

[1 oz] including traces).

DS(on)

in a ChipFET Package for High Efficiency Performance

Parameter

Steady

N−Ch

P−Ch

N−Ch

P−Ch

State

t v 5

State

t v 5

State

t v 5

= 25 C unless otherwise noted)

t = 10 ms

= 25 C

= 85 C

= 25 C

= 85 C

= 25 C

Symbol

DSS

STG

−55 to

Value

−2.2

−1.6

−3.0

−9.0

150

260

2.9

2.1

3.9

1.1

2.1

Unit

†For information on tape and reel specifications,

NTHC5513T1

NTHC5513T1G

N−Channel

P−Channel

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

N−Channel MOSFET

(BR)DSS

−20 V

CONNECTIONS

Device

20 V

ORDERING INFORMATION

C1 = Specific Device Code

M = Month Code

http://onsemi.com

130 mW @ −4.5 V

200 mW @ −2.5 V

60 mW @ 4.5 V

80 mW @ 2.5 V

(Pb−Free)

Package

ChipFET

DS(on)

Publication Order Number:

TYP

P−Channel MOSFET

CASE 1206A

ChipFET

STYLE 2

3000/Tape & Reel

MARKING

DIAGRAM

Shipping

NTHC5513/D

S 2

−3.0 A

3.9 A

MAX

†

Related parts for NTHC5513T1G

NTHC5513T1G Summary of contents

Page 1

... D 2 − 150 STG T 260 C L Device NTHC5513T1 NTHC5513T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on 4 2.5 V 130 mW @ −4.5 V − ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient (Note 1) 2. Surface Mounted on FR4 board using pad size (Cu area = 1.127 oz] including traces). ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS (Note 3) Drain−to−Source Breakdown Voltage Zero ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 5) Reverse Recovery Time (Note 4) ...

Page 4

TYPICAL N−CHANNEL PERFORMANCE CURVES DRAIN−TO−SOURCE ...

Page 5

TYPICAL N−CHANNEL PERFORMANCE CURVES 400 ISS 300 C RSS 200 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...

Page 6

TYPICAL P−CHANNEL PERFORMANCE CURVES − − −2 −2 −1 −1 −1.4 V −1 −V , ...

Page 7

TYPICAL P−CHANNEL PERFORMANCE CURVES 600 500 ISS 400 C RSS 300 200 100 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 17. ...

Page 8

... Figure 22. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 22. This is sufficient for low power dissipation MOSFET applications, ...

Page 9

NTHC5513 PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE STYLE 2: PIN 1. SOURCE 1 ...

Page 10

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTHC5513 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: http://onsemi ...

Related keywords

NTHC5513T1G datasheet
NTHC5513T1G data sheet
NTHC5513T1G pdf datasheet
NTHC5513T1G component
NTHC5513T1G part
NTHC5513T1G distributor
NTHC5513T1G RoHS
NTHC5513T1G datasheet download