SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1553DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.66 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1553DL-T1-E3TR

Si1553DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.3
- 0.4
- 0.1
0.2
0.01
0.1
0.1
- 50
0.1
0
1
0.0
2
1
10
-4
0.2
0.02
0.05
Duty Cycle = 0.5
0.1
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
Single Pulse
0
-
T
T
Threshold Voltage
0.4
S
J
J
10
o
= 150 °C
25
- Temperature (°C)
u
-3
c r
e
I
D
t -
- o
= 250 µA
0.6
50
D
a r
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
V
l o
0.8
a t
10
T
g
100
J
-2
e
= 25 °C
(
) V
1.0
125
Square Wave Pulse Duration (s)
150
1.2
10
-1
1
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
-2
1
V
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
0
P
- Gate-to-Source Voltage (V)
Single Pulse Power
DM
-1
JM
- T
2
Time (s)
t
A
1
= P
t
2
S10-0792-Rev. E, 05-Apr-10
1
DM
I
D
Document Number: 71078
Z
= 0.66 A
thJA
3
100
thJA
t
t
1
2
(t)
= 400 °C/W
10
4
100
6
0
0
600
5