SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1553DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.66 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1553DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71078
S10-0792-Rev. E, 05-Apr-10
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
= 0.66 A
0.5
On-Resistance vs. Drain Current
= 10 V
0.2
V
0.2
DS
V
Output Characteristics
Q
GS
V
g
- Drain-to-Source Voltage (V)
GS
1.0
I
- Total Gate Charge (nC)
D
= 5 V thru 2.5 V
- Drain Current (A)
Gate Charge
= 2.5 V
0.4
1.5
0.4
0.6
2.0
V
1.5 V
GS
1 V
0.6
2 V
0.8
= 4.5 V
2.5
1.0
0.8
3.0
100
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
- 50
0
0.0
0
C
On-Resistance vs. Junction Temperature
- 25
V
I
rss
D
GS
= 0.66 A
0.5
= 4.5 V
4
V
V
GS
T
DS
0
Transfer Characteristics
C
J
C
iss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
- Drain-to-Source Voltage (V)
25
1.0
Capacitance
8
T
25 °C
C
= 125 °C
50
Vishay Siliconix
1.5
12
75
Si1553DL
- 55 °C
100
www.vishay.com
2.0
16
125
2.5
150
20
3