SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet

MOSFET N/P-CH 20V SC70-6

SI1553DL-T1-E3

Manufacturer Part Number
SI1553DL-T1-E3
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1553DL-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA, 410mA
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
995mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1553DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1553DL-T1-E3
Manufacturer:
CRUSTRL
Quantity:
6
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1553DL-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71078
S10-0792-Rev. E, 05-Apr-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
V
DS
- 20
20
(V)
Ordering Information: Si1553DL-T1-E3 (Lead (Pb)-free)
0.995 at V
1.800 at V
J
a
0.385 at V
0.630 at V
= 150 °C)
Complementary 2.5 V (G-S) MOSFET
a
R
DS(on)
G
D
S
GS
GS
GS
GS
1
1
2
a
(Ω)
= - 4.5 V
= - 2.5 V
= 4.5 V
= 2.5 V
1
2
3
Si1553DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
SC-70 (6-LEADS)
Steady State
Steady State
a
T
T
T
T
SOT-363
A
A
A
A
Top View
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
= 25 °C, unless otherwise noted
± 0.70
± 0.54
± 0.44
± 0.32
I
D
(A)
6
5
4
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
D
G
S
I
thJA
thJF
I
DS
GS
D
S
D
2
1
2
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Definition
± 0.70
± 0.50
0.25
0.30
0.16
5 s
N-Channel
Typical
360
400
300
20
Marking Code
Steady State
®
RA XX
± 0.66
± 0.48
Power MOSFET
0.23
0.27
0.14
Part # Code
- 55 to 150
± 12
± 1
Lot Traceability
and Date Code
± 0.44
± 0.31
- 0.25
0.30
0.16
5 s
P-Channel
Maximum
Vishay Siliconix
415
460
350
- 20
Steady State
± 0.41
± 0.30
- 0.23
Si1553DL
0.27
0.14
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1553DL-T1-E3

SI1553DL-T1-E3 Summary of contents

Page 1

... V GS 0.995 P-Channel - 20 1.800 Ordering Information: Si1553DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1553DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71078 S10-0792-Rev. E, 05-Apr- 1 2.0 2 0.6 0.8 1.0 0.6 0.8 Si1553DL Vishay Siliconix 1.0 0.8 0.6 0 125 °C C 0.2 25 ° °C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 ...

Page 4

... Si1553DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.2 0 250 µ 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Document Number: 71078 S10-0792-Rev. E, 05-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot = 5 V thru 2 1.5 V 2.0 2 0.6 0.8 1.0 Si1553DL Vishay Siliconix - 1 °C C 0.8 25 °C 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 6

... Si1553DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0. 0.0 0.2 0.4 0 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 0.8 1.0 1.2 1 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71078. Document Number: 71078 S10-0792-Rev. E, 05-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1553DL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 400 ° ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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