FDC6506P Fairchild Semiconductor, FDC6506P Datasheet - Page 3

• Manufacturer Part Number: FDC6506P
• Description: MOSFET P-CHAN DUAL 30V SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC6506P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Module Configuration: Dual
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6506PTR

Typical Characteristics
10
4
3
2
1
0
8
6
4
2
0
1
0
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
V
DS
I
V
D
=-5V
GS
=-1.8A
=-10V
-25
V
GS
1
=-10V
-V
-V
with Temperature.
2
DS
GS
T
-7.0V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
-5.5V
25
2
-4.5V
3
-4.0V
T
50
J
=-55
-3.5V
o
3
C
75
125
-3.0V
o
25
100
o
o
4
C)
C
4
125
150
5
5
0.001
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
0.01
0.1
2
1
with Drain Current and Gate Voltage.
10
2
1
Figure 6. Body Diode Forward Voltage
0
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
0
V
V
GS
Variation with Source Current
with Gate-to-Source Voltage.
GS
=-4.0V
=0
3
-4.5V
2
0.3
-V
and Temperature.
4
GS
-5.0V
-V
, GATE TO SOURCE VOLTAGE (V)
SD
-I
D
, BODY DIODE VOLTAGE (V)
T
, DRAIN CURRENT (A)
J
=125
5
-6.0V
4
0.6
o
25
C
o
C
T
6
-7.0V
J
=125
-55
25
o
o
C
6
C
0.9
o
C
7
-10V
8
8
1.2
I
D
=-1.0A
9
FDC6506P Rev. C
10
1.5
10