FDC6506P Fairchild Semiconductor, FDC6506P Datasheet

FDC6506P

Manufacturer Part Number

FDC6506P

Description

MOSFET P-CHAN DUAL 30V SSOT6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDC6506P.pdf (5 pages)

Specifications of FDC6506P

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

170 mOhm @ 1.8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.8A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

3.5nC @ 10V

Input Capacitance (ciss) @ Vds

190pF @ 15V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.17 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

3 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.8 A

Power Dissipation

960 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.17Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Module Configuration

Dual

Continuous Drain Current Id

1.8A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

170mohm

Rds(on) Test Voltage Vgs

-10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC6506PTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDC6506P

Manufacturer:

FSC

Quantity:

12 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDC6506P

Manufacturer:

Fairchild Semiconductor

Quantity:

56 605

Company:

BOSTOCK HK LIMITED

Part Number:

FDC6506P

Manufacturer:

FAIRCHILD

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC6506P

Manufacturer:

FAIRCHILD/仙童

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20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC6506P-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (65Kb)

1999 Fairchild Semiconductor Corporation

FDC6506P

Dual P-Channel Logic Level PowerTrench

General Description

These P-Channel logic level MOSFETs are produced using

Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Package Outlines and Ordering Information

Symbol

Power management

Battery protection

DSS

GSS

Load switch

, T

SuperSOT

Device Marking

stg

506

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

-6

- Continuous

- Pulsed

FDC6506P

Parameter

Device

= 25°C unless otherwise noted

Reel Size

Features

•

7’’

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

than standard SO-8); low profile (1mm thick).

-1.8 A, -30 V. R

Low gate charge (2.3nC typical).

Fast switching speed.

SuperSOT

High performance trench technology for extremely

low R

MOSFET

DS(ON)

-6 package: small footprint (72% smaller

DS(on)

Tape Width

DS(on)

-55 to +150

Ratings

8mm

= 0.170

= 0.280

0.96

-1.8

130

-30

-10

0.9

0.7

@ V

February 1999

= -10 V

Quantity

3000 units

= -4.5 V

Units

C/W

FDC6506P Rev. C

Related parts for FDC6506P

FDC6506P Summary of contents

Page 1

... Device Reel Size FDC6506P 7’’ February 1999 = 0.170 @ V = -10 V DS(on 0.280 @ V = -4.5 V DS(on package: small footprint (72% smaller Ratings Units - -1.8 A -10 0.96 W 0.9 0.7 -55 to +150 C 130 C/W 60 C/W Tape Width Quantity 8mm 3000 units FDC6506P Rev. C ...

Page 2

... C/W when 2 mounted on a 0.005 in pad of 2 oz. copper. 2.0% Min Typ Max Units -30 V -20 mV 100 nA -100 mV/ C 0.14 0.17 0.20 0.27 0.22 0.28 - 190 2.3 3 0.8 nC -0.8 A -0.8 -1 180 C/W when 2 mounted on a 0.0015 in pad of 2 oz. copper. FDC6506P Rev ...

Page 3

... Gate-to-Source Voltage 125 0.1 0.01 0.001 Figure 6. Body Diode Forward Voltage Variation with Source Current -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( =-1. =125 GATE TO SOURCE VOLTAGE ( =125 -55 C 0.3 0.6 0.9 1.2 1 BODY DIODE VOLTAGE (V) SD and Temperature. FDC6506P Rev ...

Page 4

... Transient themal response will change depending on the circuit board design. f=1MHz V = iss C oss C rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =180°C 25° 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 180 °C/W JA P(pk ( Duty Cycle 100 300 FDC6506P Rev 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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