IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 9

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 21. IGBT transient thermal resistance
10
10
10
-1
-2
0
K/W
K/W
K/W
10µs
D =0.5
0.1
0.2
( D = t
single pulse
0.01
0.02
100µs
0.05
t
p
P
,
/ T )
PULSE WIDTH
1ms
R
0.2911
0.4092
0.5008
0.1529
R , ( K / W )
1
C
1
=
1
10ms
/R
1
C
6.53*10
8.33*10
7.37*10
7.63*10
2
=
100ms
, ( s )
2
/R
R
2
-2
-3
-4
-5
2
9
TrenchStop
®
Series
IGP10N60T
Rev. 2.3 Sep. 07
q