IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 8

• Manufacturer Part Number: IGP10N60T
• Description: IGBT 600V 20A 110W TO220-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGP10N60T

• Package / Case: TO-220-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
150A
125A
100A
15V
10V
5V
0V
75A
50A
25A
0A
0nC
12V
V
( I
current as a function of gate-
emitter voltage
( V
GE
C
CE
=10 A)
,
20nC
GATE
Q
14V
GE
400V, T
,
-
GATE CHARGE
EMITTETR VOLTAGE
120V
40nC
j
16V
150 C)
60nC
18V
480V
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
10pF
1nF
10V
®
0V
V
Series
CE
V
of collector-emitter voltage
( V
function of gate-emitter voltage
( V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
,
=600V , start at T
=0V, f = 1 MHz)
GATE
<150°C)
10V
-
EMITETR VOLTAGE
12V
-
EMITTER VOLTAGE
IGP10N60T
13V
J
Rev. 2.3 Sep. 07
= 25°C,
20V
14V
C
C
C
oss
rss
iss
q