IGP10N60T Infineon Technologies, IGP10N60T Datasheet - Page 4

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IGP10N60T

Manufacturer Part Number
IGP10N60T
Description
IGBT 600V 20A 110W TO220-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGP10N60T

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
110W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Continuous Collector Current Ic Max
20 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-220
Vce (max)
600.0 V
Ic(max) @ 25°
20.0 A
Ic(max) @ 100°
10.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGP10N60T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
120W
100W
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
30A
25A
20A
15A
10A
80W
60W
40W
20W
5A
0A
0W
10H z
25°C
50°C
switching frequency
(T
V
case temperature
(T
100H z
f,
GE
T
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
I
I
175 C, D = 0.5, V
175 C)
c
c
CASE TEMPERATURE
75°C
T
1kHz
C
=80°C
100°C 125°C 150°C
T
G
C
=110°C
= 23 )
10kHz
CE
= 400V,
100kHz
4
TrenchStop
Figure 2. Safe operating area
Figure 4. Collector current as a function of
0,1A
10A
30A
20A
10A
1A
0A
1V
25°C
®
V
Series
CE
(D = 0, T
V
case temperature
(V
,
COLLECTOR
GE
T
GE
=15V)
C
10V
,
CASE TEMPERATURE
15V, T
75°C
C
= 25 C, T
-
EMITTER VOLTAGE
j
IGP10N60T
100V
175 C)
j
125°C
Rev. 2.3 Sep. 07
175 C;
t
1000V
p
=1µs
100µs
500µs
20µs
5µs
10ms
DC
q

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