IXGQ20N120B IXYS, IXGQ20N120B Datasheet - Page 6

• Manufacturer Part Number: IXGQ20N120B
• Description: IGBT 40A 1200V TO-3P
• Manufacturer: IXYS

Specifications of IXGQ20N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3P
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
Fig. 17 Forward current I
Fig. 20 Dynamic parameters Q
Fig. 23 Transient thermal resistance junction to case
of the following U.S. patents:
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
0
0
T
T
versus T
VJ
VJ
=150°C
=100°C
1
40
I
RM
Q
r
VJ
0.0001
2
80
T
3
VJ
F
T
V
120
VJ
versus V
F
= 25°C
°C
r
4
, I
0.001
V
RM
160
F
Q
t
rr
r
2000
1500
1000
Fig. 18 Reverse recovery charge Q
Fig. 21 Recovery time t
150
140
130
120
110
100
500
nC
ns
90
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
0
100
0.01
0
T
V
VJ
R
= 100°C
= 600V
versus -di
200
I
I
I
F
F
F
= 20A
= 10A
= 5A
400
F
I
I
I
0.1
/dt
F
F
F
= 20A
= 10A
= 5A
-di
600
F
-di
T
V
/dt
VJ
R
rr
t
F
/dt
= 100°C
= 600V
versus -di
A/µs
s
800
A/µs
DSEP 8-12A
1000
1000
1
F
/dt
r
V
I
RM
FR
120
Fig. 19 Peak reverse current I
Constants for Z
Fig. 22 Peak forward voltage V
40
30
20
10
80
40
A
V
0
0
1
2
3
i
0
0
T
V
t
VJ
I
I
I
R
fr
F
F
F
= 20A
= 10A
= 5A
= 100°C
= 600V
200
200
versus -di
t
fr
versus di
R
1.449
0.558
0.493
IXGQ 20N120BD1
thi
400
400
thJC
(K/W)
IXGQ 20N120B
calculation:
F
/dt
F
600
600
/dt
di
-di
T
I
F
F
V
/dt
F
VJ
/dt
FR
= 100°C
= 10A
A/µs
A/µs
800
800
t
0.0052
0.0003
0.017
6,534,343
i
(s)
RM
1000
1000
FR
1.2
µs
0.8
0.4
0.0
and
t
fr