IXGQ20N120B IXYS, IXGQ20N120B Datasheet - Page 4

• Manufacturer Part Number: IXGQ20N120B
• Description: IGBT 40A 1200V TO-3P
• Manufacturer: IXYS

Specifications of IXGQ20N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3P
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1400
1200
1000
800
600
400
200
24
21
18
15
12
14
12
10
9
6
3
0
8
6
4
2
0
10
10
0
I
T
C
t
t
T
V
V
J
R
R
V
V
T
d(off)
fi
= 10A
Fig. 11. Dependence of Turn-off
J
J
GE
CE
= -40ºC
GE
CE
Fig. 9. Dependence of Turn-Off
G
G
125ºC
= 125ºC
= 125ºC
- - - - - -
30
Fig. 7. Trans conductance
= 10Ω
= 100Ω - - -
25ºC
= 960V
10
= 960V
15
= 15V
= 15V
T
J
= 125ºC
Sw itching Tim e on R
Ene rgy Loss on I
50
20
20
I
I
I
R
C
C
C
- Amperes
= 20A
G
70
- Amperes
- Ohms
30
25
T
90
J
= 25ºC
I
C
40
30
= 40A
110
c
G
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
50
35
130
150
60
40
550
500
450
400
350
300
250
200
16
14
12
10
14
12
10
8
6
4
2
0
8
6
4
2
0
10
25
10
R
R
V
V
T
V
V
Fig. 12. Depe ndence of Turn-off
35
Fig. 10. De pende nce of Turn-off
J
GE
CE
Fig. 8. Dependence of Turn-off
GE
CE
G
G
t
t
R
V
V
Ene rgy Loss on Tem pe rature
= 125ºC
d(off)
fi
30
= 10Ω
= 100Ω - - -
GE
CE
G
= 960V
= 960V
= 15V
15
= 15V
- - - - - -
= 10Ω
45
= 960V
= 15V
Sw itching Tim e on I
T
T
Ene rgy Loss on R
J
J
50
= 25ºC
55
- Degrees Centigrade
20
I
R
C
65
- Amperes
G
70
- Ohms
75
25
IXGQ 20N120BD1
90
85
IXGQ 20N120B
30
I
I
I
I
C
I
I
C
C
C
95
110
G
C
C
= 10A
= 40A
= 40A
= 20A
= 20A
= 10A
c
T
J
105 115 125
= 125ºC
35
6,534,343
130
150
40