IXGQ20N120B IXYS, IXGQ20N120B Datasheet
IXGQ20N120B
Specifications of IXGQ20N120B
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IXGQ20N120B Summary of contents
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... CES CE CES ± GES 20A CE(sat Note 2 © 2003 IXYS All rights reserved IXGQ 20N120B IXGQ 20N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 100 = 10 Ω @0.8 V CES 190 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... T or increased R J Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... Fig. 5. Colle ctor-to-Em itter Voltage vs . Gate-to-Em iite r voltage 6 40A C 20A 4.5 10A 4 3.5 3 2 Volts G E © 2003 IXYS All rights reserved 160 140 120 100 3.5 4 4.5 1.5 1.4 1.3 1.2 1.1 7V 1.0 0.9 0.8 5V 0 ...
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... T = 125º 15V GE 1000 V = 960V CE 800 I = 10A C 600 400 I = 20A C 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 550 500 450 400 350 I = 40A ...
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... C 300 250 200 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2003 IXYS All rights reserved 40A 10A 40A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGQ 20N120B IXGQ 20N120BD1 Fig ...
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... Z thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2000 T = 100° 600V R nC ...