HGTP12N60A4D Fairchild Semiconductor, HGTP12N60A4D Datasheet - Page 7

• Manufacturer Part Number: HGTP12N60A4D
• Description: IGBT N-CH SMPS 600V 54A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP12N60A4D_NL; HGTP12N60A4D_NL

Typical Performance Curves
Test Circuit and Waveforms
©2001 Fairchild Semiconductor Corporation
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
0
10
R
-5
0.50
0.20
0.10
0.05
0.02
0.01
G
= 10
SINGLE PULSE
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
L = 500 H
DUT
HGTP12N60A4D
DIODE TA49371
+
-
Unless Otherwise Specified (Continued)
V
10
DD
t
-3
1
= 390V
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
FIGURE 25. SWITCHING TEST WAVEFORMS
t
10
d(OFF)I
90%
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
-1
10%
DUTY FACTOR, D = t
PEAK T
t
fI
J
P
D
= (P
E
OFF
90%
D
X Z
10
t
1
0
t
E
JC
2
1
ON2
/ t
X R
10%
2
t
d(ON)I
JC
) + T
t
rI
C
10
1