HGTP12N60A4D Fairchild Semiconductor, HGTP12N60A4D Datasheet - Page 2

• Manufacturer Part Number: HGTP12N60A4D
• Description: IGBT N-CH SMPS 600V 54A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP12N60A4D_NL; HGTP12N60A4D_NL

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2001 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
1. Pulse width limited by maximum junction temperature.
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
C
= 25
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C
= 25
> 25
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
J
T
= 25
C
= 25
o
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
V
V
t
t
Q
BV
t
t
CE(SAT)
SSOA
d(OFF)I
d(OFF)I
V
E
E
E
E
GE(TH)
d(ON)I
E
d(ON)I
E
I
I
g(ON)
CES
GES
GEP
ON1
ON2
OFF
ON1
ON2
OFF
t
t
t
t
CES
rI
fI
rI
fI
I
V
I
V
I
V
T
L = 100 H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 500 H,
Test Circuit (Figure 24)
IGBT and Diode at T
I
V
R
L = 500 H,
Test Circuit (Figure 24)
C
C
C
C
C
CE
CE
J
CE
GE
GE
CE
CE
GE
CE
G
G
= 250 A, V
= 12A,
= 250 A, V
= 12A, V
= 12A,
= 150
= 10
= 10
= 12A,
= 12A,
= 600V
= 15V
= 20V
= 300V
= 390V,
= 15V,
= 390V, V
o
C, R
TEST CONDITIONS
CE
CE
GE
CE
G
GE
= 300V
= 10 , V
= 600V
= 600V
= 0V
= 15V,
J
J
T
T
T
T
V
V
J
= 25
= 125
, T
J
J
J
J
GE
GE
= 25
= 125
= 25
= 125
C110
GEM
GES
GE
CES
STG
C25
pkg
CM
= 15V
= 20V
o
C,
o
D
L
= 15V,
o
o
C,
C
C
o
o
C
C
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGT1S12N60A4DS
HGTG12N60A4D,
HGTP12N60A4D,
60A at 600V
-55 to 150
MIN
600
60
1.33
600
167
300
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
23
96
20
30
TYP
160
110
250
175
2.0
1.6
5.6
78
97
17
96
18
55
50
17
16
70
55
8
8
-
-
-
-
-
MAX
250
120
170
350
285
2.0
2.7
2.0
250
96
95
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
A
A
A
V
V
C
C
C
UNITS
o
C
mA
nA
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A
V
A
J
J
J
J
J
J