HGTP12N60A4D Fairchild Semiconductor, HGTP12N60A4D Datasheet - Page 6

• Manufacturer Part Number: HGTP12N60A4D
• Description: IGBT N-CH SMPS 600V 54A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP12N60A4D_NL; HGTP12N60A4D_NL

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
3.0
2.5
2.0
1.5
1.0
0.5
14
12
10
65
60
55
50
45
40
35
30
25
20
15
10
8
6
4
2
0
0
5
200
0
0
DUTY CYCLE < 0.5%,
PULSE DURATION = 250 s
FREQUENCY = 1MHz
125
125
300
di
o
VOLTAGE
VOLTAGE DROP
CURRENT
EC
o
V
C t a
C t b
CE
0.5
/dt, RATE OF CHANGE OF CURRENT (A/ s)
5
, COLLECTOR TO EMITTER VOLTAGE (V)
400
C
C
C
IES
OES
RES
V
EC
, FORWARD VOLTAGE (V)
500
1.0
10
600
I
1.5
EC
700
15
125
= 12A, V
o
Unless Otherwise Specified (Continued)
C
800
CE
2.0
20
25
25
= 390V
900
o
o
C t a
C t b
25
o
C
1000
2.5
25
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
400
350
300
250
200
150
100
90
80
70
60
50
40
30
20
10
50
2.4
2.3
2.2
2.1
2.0
1.9
0
0
200
1
8
dI
125
V
EC
CE
2
300
o
di
/dt = 200A/ s
C t rr
vs GATE TO EMITTER VOLTAGE
CURRENT
= 390V
9
EC
/dt, RATE OF CHANGE OF CURRENT (A/ s)
3
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
V
GE
400
10
125
I
, GATE TO EMITTER VOLTAGE (V)
4
EC
125
125
o
, FORWARD CURRENT (A)
C t a
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s, T
o
o
500
5
C I
C I
11
EC
EC
125
6
= 12A
= 6A
600
12
o
C t b
7
700
13
8
25
25
I
I
I
25
25
25
o
o
GE
CE
CE
CE
800
9
C I
C I
14
o
o
o
C t rr
C t a
C t b
= 18A
= 12A
= 6A
= 15V
EC
EC
10
J
= 12A
= 6A
900
= 25
15
11
o
C
1000
16
12