ISL9V2540S3S Fairchild Semiconductor, ISL9V2540S3S Datasheet - Page 6

IGBT IGN N-CH ECOSPARK D2PAK

ISL9V2540S3S

Manufacturer Part Number
ISL9V2540S3S
Description
IGBT IGN N-CH ECOSPARK D2PAK
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V2540S3S

Voltage - Collector Emitter Breakdown (max)
430V
Vce(on) (max) @ Vge, Ic
1.8V @ 4V, 6A
Current - Collector (ic) (max)
15.5A
Power - Max
166.7W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Package Type
TO-263
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-40C
Operating Temperature (max)
175C
Operating Temperature Classification
Automotive
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9V2540S3ST
Manufacturer:
FAIRCHIL
Quantity:
10 000
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
Typical Performance Curves
Figure 13. Capacitance vs Collector to Emitter
1500
1250
1000
750
500
250
10
10
10
0
445
440
435
430
425
420
415
410
405
10
-1
-2
0
0
-5
10
0.05
0.02
0.5
0.2
0.1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
5
CRES
SINGLE PULSE
Voltage
Figure 15. Breakdown Voltage vs Series Gate Resistance
10
0.01
CIES
COES
10
FREQUENCY = 1 MHz
-4
15
(Continued)
20
T
T
1
, RECTANGULAR PULSE DURATION (s)
J
100
R
= 175°C
G
, SERIES GATE RESISTANCE ( )
25
T
J
= 25°C
10
-3
10
8
6
4
2
0
0
I
V
G(REF)
CE
5
= 12V
T
J
Figure 14. Gate Charge
= 1mA, R
= - 40°C
V
CE
10
= 6V
Q
DUTY FACTOR, D = t
PEAK T
G
L
, GATE CHARGE (nC)
15
= 1.25
1000
10
-2
J
P
20
= (P
D
T
J
= 25°C
D
X Z
25
t
1
t
2
JC
1
X R
/ t
30
2
JC
www.fairchildsemi.com
) + T
35
C
5000
10
-1
40

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