ISL9V2540S3S Fairchild Semiconductor, ISL9V2540S3S Datasheet - Page 5

• Manufacturer Part Number: ISL9V2540S3S
• Description: IGBT IGN N-CH ECOSPARK D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: EcoSPARK™r

Specifications of ISL9V2540S3S

• Voltage - Collector Emitter Breakdown (max): 430V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 4V, 6A
• Current - Collector (ic) (max): 15.5A
• Power - Max: 166.7W
• Input Type: Logic
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -40C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Automotive
• Product: Electronic Ignition Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
Typical Performance Curves
Figure 7. Collector to Emitter On-State Voltage vs
10000
1000
100
20
15
10
0.1
16
14
12
10
10
5
0
Figure 11. Leakage Current vs Junction
8
6
4
2
0
Figure 9. DC Collector Current vs Case
1
0
-50
25
V
V
V
V
V
V
GE
GE
GE
GE
GE
GE
= 10.0V
-25
0.5
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
V
50
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
1.0
T
J
Collector Current
, JUNCTION TEMPERATURE (°C)
T
C
Temperature
Temperature
, CASE TEMPERATURE (°C)
75
25
1.5
50
V
V
V
CES
CES
ECS
2.0
100
= 300V
= 250V
= 24V
75
2.5
100
125
3.0
125
(Continued)
V
T
GE
150
J
= 175°C
3.5
= 4.0V
150
175
175
4.0
20
15
10
10
2.0
1.8
1.6
1.4
1.2
1.0
Figure 10. Threshold Voltage vs Junction
5
0
9
8
7
6
5
4
3
2
1.0
25
-50
Figure 12. Switching Time vs Junction
Inductive t
DUTY CYCLE < 0.5%, V
Figure 8. Transfer Characteristics
PULSE DURATION = 250µs
Resistive t
-25
1.5
50
OFF
V
T
GE
T
0
T
J
OFF
J
J
, JUNCTION TEMPERATURE (°C)
, GATE TO EMITTER VOLTAGE (V)
T
= 25°C
JUNCTION TEMPERATURE (°C)
J
= 175°C
Temperature
Temperature
2.0
75
25
I
CE
= 6.5A, V
CE
50
= 5V
100
2.5
GE
75
= 5V, R
T
J
125
100
3.0
= -40°C
G
Resistive t
= 1K
V
I
125
CE
CE
150
= 1mA
3.5
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= V
150
ON
GE
175
175
4.0