ISL9V2540S3S Fairchild Semiconductor, ISL9V2540S3S Datasheet
ISL9V2540S3S
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ISL9V2540S3S Summary of contents
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... ISL9V2540S3S Rev. A General Description o C The ISL9V2540S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARK™ ...
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... Series Gate Resistance 1 R Gate to Emitter Resistance 2 On State Characteristics V Collector to Emitter Saturation Voltage CE(SAT) V Collector to Emitter Saturation Voltage CE(SAT) ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev 25°C unless otherwise noted A Parameter = 12.9A 3.0mHy SCIS = 10A 3.0mHy SCIS = 25°C, See Fig 110° ...
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... Switching Characteristics t Current Turn-On Delay Time-Resistive d(ON)R t Current Rise Time-Resistive riseR t Current Turn-Off Delay Time-Inductive d(OFF)L t Current Fall Time-Inductive fL SCIS Self Clamped Inductive Switching Thermal Characteristics R Thermal Resistance Junction-Case JC ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev 10A 12V 5V, See Fig 1.0mA 25°C 1 150° ...
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... 0.5 1.0 1.5 2 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs Collector Current ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev 5V,V = 14V SCIS Curves valid for V 0 125 150 175 200 0 Figure 2. Self Clamped Inductive Switching 2 10A CE 2.1 2 ...
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... V = 300V CES 250V CES 0.1 -50 - JUNCTION TEMPERATURE (°C) J Figure 11. Leakage Current vs Junction Temperature ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A. (Continued) 20 DUTY CYCLE < 0.5%, V PULSE DURATION = 250µ 175° 2.5 3.0 3.5 4.0 1.0 Figure 8. Transfer Characteristics 2 4.0V GE 1.8 1 ...
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... Figure 15. Breakdown Voltage vs Series Gate Resistance 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A. (Continued FREQUENCY = 1 MHz G(REF 175° 25°C J 100 R , SERIES GATE RESISTANCE ( ) ...
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... Test Circuit and Waveforms R G PULSE DUT GEN G Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P R REQUIRED PEAK Figure 19. Unclamped Energy Test Circuit ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev Figure 18 DUT 0.01 Figure 20. Unclamped Energy Waveforms R or LOAD DUT - E and t ...
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... Fairchild Semiconductor Corporation ISL9V2540S3S Rev A. JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...