IXBH42N170 IXYS, IXBH42N170 Datasheet - Page 4

• Manufacturer Part Number: IXBH42N170
• Description: IGBT HIVOLT 1700V 75A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH42N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 42A
• Current - Collector (ic) (max): 80A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1700 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 75 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): 42
• Vce(sat), Typ, Tj=25°c, (v): 2.8
• Tf Typ, Tj=25°c, (ns): 740
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1157068

IXYS reserves the right to change limits, test conditions and dimensions.
110
100
16
14
12
10
90
80
70
60
50
40
30
20
10
55
50
45
40
35
30
25
20
15
10
8
6
4
2
0
0
5
0
200
0
0
Fig. 11. Reverse-Bias Safe Operating Area
V
I
I
20
T
R
dV / dt < 10V / ns
C
G
CE
400
J
20
G
= 42A
= 10mA
= 125ºC
= 850V
= 10Ω
40
600
Fig. 7. Transconductance
40
60
Fig. 9. Gate Charge
Q
800
G
60
80
- NanoCoulombs
I
V
C
CE
- Amperes
1000
100
- Volts
80
120
1200
100
T
J
140
= - 40ºC
1400
120
160
25ºC
125ºC
1600
140
180
1800
200
160
10,000
1,000
1.00
0.10
0.01
120
110
100
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
0.6
0
0.8
f
= 1 MHz
Fig. 12. Maximum Transient Thermal
5
1.0
0.001
Fig. 8. Forward Voltage Drop of
1.2
10
1.4
Fig. 10. Capacitance
Pulse Width - Seconds
Intrinsic Diode
15
1.6
0.01
Impedance
V
V
CE
1.8
F
- Volts
20
- Volts
2.0
0.1
2.2
T
25
J
C ies
C oes
C res
= 25ºC
IXBH42N170
IXBT42N170
2.4
30
2.6
1
T
2.8
J
35
= 125ºC
3.0
3.2
40
10