IXBH42N170 IXYS, IXBH42N170 Datasheet
IXBH42N170
Specifications of IXBH42N170
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IXBH42N170 Summary of contents
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... GE(th 0.8 • V CES CE CES 0V ± 20V GES 42A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXBH42N170 IXBT42N170 Maximum Ratings 1700 Ω 1700 ± 20 ± 300 Ω 100 G CM ≤ V 1350 CES 360 -55 ... +150 150 -55 ... +150 300 260 1 ...
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... R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 2.8 V μs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH42N170 IXBT42N170 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1 ...
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... T - Degrees Centigrade J Fig. 6. Input Admittance 160 140 120 100 4.0 4.5 5.0 5.5 6.0 6.5 7 Volts GE IXBH42N170 IXBT42N170 CE(sat 21A C 75 100 125 150 40ºC J 25ºC 125ºC 7.5 8.0 8.5 9.0 9.5 IXYS REF: B_42N170(7N)10-07-08 ...
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... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25ºC J 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 Volts F Fig. 10. Capacitance C ies C oes C res MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds IXBH42N170 IXBT42N170 T = 125ºC J 2.4 2.6 2.8 3.0 3 ...
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... Switching Times vs. Gate Resistance d(off ) T = 125º 15V 850V CE 900 800 I = 42A C 700 600 500 400 300 Ohms G IXBH42N170 IXBT42N170 380 360 340 320 300 280 260 95 105 115 125 1800 1600 1400 1200 1000 800 I = 84A C 600 400 200 IXYS REF: B_42N170(7N)10-07-08 ...