IXBH42N170 IXYS, IXBH42N170 Datasheet - Page 2

• Manufacturer Part Number: IXBH42N170
• Description: IGBT HIVOLT 1700V 75A TO-247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH42N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 42A
• Current - Collector (ic) (max): 80A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1700 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 75 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): 42
• Vce(sat), Typ, Tj=25°c, (v): 2.8
• Tf Typ, Tj=25°c, (ns): 740
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1157068

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
t
t
t
t
R
R
Reverse Diode
Symbol Test Conditions
(T
V
t
I
Note 1: Pulse test, t
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
fS
F
ies
oes
res
g
ge
gc
thJC
thCS
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching times, T
I
V
Resistive Switching times, T
I
V
I
V
I
V
I
(TO-247)
I
C
C
F
C
C
F
CE
CE
R
CE
= 42A, V
= 21A, V
= 42A, V
= 42A, V
= 42A, V
= 42A, V
= 100V
= 850V, R
= 850V, R
Test Conditions
= 25V, V
≤
300μs, duty cycle, d
GE
GE
GE
GE
GE
CE
GE
= 0V
= 0V, -di
= 15V
= 15V
= 15V, V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 10
= 10
4,835,592
4,881,106
Ω
Ω
F
CE
/dt = 100A/μs
= 0.5 • V
4,931,844
5,017,508
5,034,796
≤
J
J
2%.
= 25°C
= 125°C
CES
5,049,961
5,063,307
5,187,117
Min.
24
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
Typ.
3990
188
139
340
188
330
740
0.25
6,162,665
6,259,123 B1
6,306,728 B1
225
665
32
70
76
37
36
1.32
29
Typ.
36
Max.
0.35
Max.
6,404,065 B1
6,534,343
6,583,505
2.8
°
°
C/W
C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
μs
V
A
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXBT) Outline
TO-247 (IXBH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
IXBH42N170
IXBT42N170
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216