IXGT30N120B3D1 IXYS, IXGT30N120B3D1 Datasheet - Page 6

• Manufacturer Part Number: IXGT30N120B3D1
• Description: IGBT PT 1200V 30A W/DIODE TO268
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGT30N120B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Package Type: TO-268
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 204
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.10
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 28
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
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0
25
5
Switching Times vs. Junction Temperature
t
R
V
t
T
V
Switching Times vs. Gate Resistance
r
CE
35
r
G
J
CE
7
= 125ºC, V
= 5Ω , V
= 960V
= 960V
45
9
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
GE
t
d(on)
11
T
55
t
GE
d(on)
J
= 15V
- Degrees Centigrade
= 15V
- - - -
R
13
65
- - - -
I
G
C
- Ohms
= 30A
I
15
75
C
= 60A
17
I
85
C
= 60A
19
95
I
C
= 30A
105
21
115
23
125
25
50
46
42
38
34
30
26
22
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14
26
25
24
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20
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14
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100
90
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40
30
20
10
0
15
Switching Times vs. Collector Current
t
R
V
20
r
CE
G
= 5Ω , V
= 960V
Fig. 19. Inductive Turn-on
25
GE
t
d(on)
30
= 15V
T
- - - -
J
= 125ºC, 25ºC
35
I
C
- Amperes
40
IXGH30N120B3D1
IXGT30N120B3D1
45
IXYS REF: G_30N120B3(4A)5-06-08-A
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