IXGT30N120B3D1 IXYS, IXGT30N120B3D1 Datasheet

IGBT PT 1200V 30A W/DIODE TO268

IXGT30N120B3D1

Manufacturer Part Number
IXGT30N120B3D1
Description
IGBT PT 1200V 30A W/DIODE TO268
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGT30N120B3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 30A
Current - Collector (ic) (max)
30A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Package Type
TO-268
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
204
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.10
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
28
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGT30N120B3D1
Manufacturer:
IXYS
Quantity:
2 000
GenX3
High speed Low Vsat PT
IGBTs 3-20 kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
T
T
Weight
Symbol
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
TM
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-247
TO-268
Test Conditions
Test Conditions
I
V
V
V
I
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 250μA, V
= 30A, V
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
1200V IGBT
= V
= 0V, V
= 0V
CES
GE
GE
VJ
= ±20V
= 125°C, R
CE
= 15V, Note 1
= V
GE
GE
= 1MΩ
G
= 5Ω
T
T
J
J
= 125°C
= 125°C
(T
IXGT30N120B3D1
IXGH30N120B3D1
J
= 25°C, unless otherwise specified)
Min.
3.0
@ 0.8 • V
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
Characteristic Values
I
CM
1200
2.95
2.96
1200
Typ.
= 60
±20
±30
150
300
150
300
260
30
28
CE
6
4
±100
Max.
300
5.0
1.5
3.5
Nm/lb.in.
mA
μA
°C
nA
°C
°C
°C
°C
W
V
g
V
V
V
V
V
A
A
A
A
V
g
TO-247 AD (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
t
Features
Advantages
Applications
C110
fi(typ)
Optimized for low conduction and
switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
CES
CE(sat)
G
C
G
E
E
C
TAB = Collector
≤ ≤ ≤ ≤ ≤
= 1200V
= 30A
= 204ns
£
= Collector
C (TAB)
3.5V
DS99566A(05/08)
C (TAB)

Related parts for IXGT30N120B3D1

IXGT30N120B3D1 Summary of contents

Page 1

... GE(th CES CE CES ±20V 0V, V GES 30A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGH30N120B3D1 IXGT30N120B3D1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 150 = 5Ω 0.8 • 300 -55 ... +150 150 -55 ... +150 1. 300 260 6 4 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...

Page 2

... J Min. Typ 150°C 1 100° 100°C 100 J (Clamp) > 0 CES 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH30N120B3D1 IXGT30N120B3D1 TO-247 AD Outline Max Dim. Millimeter ns Min. Max 4.7 A 2.2 2. 2.2 2 200 ...

Page 3

... V = 15V GE 13V 1.4 11V 1.3 1.2 9V 1.1 1.0 0.9 7V 0.8 0.7 5V 0.6 3.0 3.5 4.0 4.5 5 25º IXGH30N120B3D1 IXGT30N120B3D1 Fig. 2. Extended Output Characteristics @ 25º 15V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 60A 30A 15A C -50 ...

Page 4

... V - Volts CE 1.00 0.10 0.01 0.0001 0.001 IXYS reserves the right to change limits, test conditions, and dimensions 40ºC 25ºC 125º ies C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH30N120B3D1 IXGT30N120B3D1 Fig. 8. Gate Charge 600V 30A 10mA NanoCoulombs G Fig ...

Page 5

... T = 125ºC 300 J 275 200 250 T = 25ºC J 150 225 200 100 175 50 150 IXGH30N120B3D1 IXGT30N120B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 960V 125º 25º Amperes C Fig ...

Page 6

... 30A Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 110 50 100 60A 30A 105 115 125 IXGH30N120B3D1 IXGT30N120B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 5Ω 15V 960V 125ºC, 25º Amperes C IXYS REF: G_30N120B3(4A)5-06-08 ...

Page 7

... F versus -di / 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t rr 0.01 0.1 0.01 0.1 Time - Seconds IXGH30N120B3D1 IXGT30N120B3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 23. Peak reverse current I r versus - 100°C = 100°C ...

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