IXGT30N120B3D1 IXYS, IXGT30N120B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGT30N120B3D1
• Description: IGBT PT 1200V 30A W/DIODE TO268
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGT30N120B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Package Type: TO-268
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 204
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.10
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 28
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
100
26
24
22
20
18
16
14
12
10
10
8
6
4
2
0
0.0001
0
0
f
= 1 MHz
10
5
Fig. 7. Transconductance
10
20
Fig. 9. Capacitance
15
I
30
C
V
0.001
CE
- Amperes
T
20
- Volts
J
= - 40ºC
40
25ºC
125ºC
25
Fig. 11. Maximum Transient Thermal Impedance
C ies
C oes
C res
50
30
60
35
0.01
Pulse Width - Seconds
70
40
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
T
R
dV / dt < 10V / ns
0.1
V
I
I
J
G
C
G
CE
10
= 125ºC
= 5Ω
= 30A
= 10mA
= 600V
400
20
Fig. 8. Gate Charge
30
Q
600
G
- NanoCoulombs
V
CE
40
- Volts
IXGH30N120B3D1
IXGT30N120B3D1
800
1
50
IXYS REF: G_30N120B3(4A)5-06-08-A
60
1000
70
1200
80
10
90