IRG4PH20KDPBF International Rectifier, IRG4PH20KDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PH20KDPBF
• Description: IGBT W/DIODE 1200V 11A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH20KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.3V @ 15V, 5A
• Current - Collector (ic) (max): 11A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 11A
• Collector Emitter Voltage Vces: 3.17V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH20KDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
0.95
0.90
0.85
0.80
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25
= 960V
= 15V
= 5.0A
C
C
C
800V
R
V
res
10
ies
oes
G
CE
R
°
, Gate Resistance (Ohm)
C
V
C
C
C
G
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
, Gate Resistance (
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G
CC
C
= 15V
= 960V
= 50Ohm
= 400V
= 11A
Gate-to-Emitter Voltage
800V
T , Junction Temperature ( C )
5
Junction Temperature
Q , Total Gate Charge (nC)
J
G
0
10
20
40
15
IRG4PH20KD
60
80 100 120 140 160
20
I =
I =
I =
C
C
C
°
25
2.5
10
5
A
A
A
5
30