IRG4PH20KDPBF International Rectifier, IRG4PH20KDPBF Datasheet

IRG4PH20KDPBF

Manufacturer Part Number

IRG4PH20KDPBF

Description

IGBT W/DIODE 1200V 11A TO247AC

Manufacturer

International Rectifier

Datasheets

1.IRG4PH20KDPBF.pdf (11 pages)

2.IRG4PH20KD.pdf (11 pages)

Specifications of IRG4PH20KDPBF

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

4.3V @ 15V, 5A

Current - Collector (ic) (max)

11A

Power - Max

60W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Transistor Type

IGBT

Dc Collector Current

11A

Collector Emitter Voltage Vces

3.17V

Power Dissipation Pd

60W

Collector Emitter Voltage V(br)ceo

1.2kV

Transistor Case Style

TO-247

No. Of Pins

Svhc

No SVHC

Rohs Compliant

Yes

Operating Temperature Range

-55Â°C To +150Â°C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Other names

*IRG4PH20KDPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRG4PH20KDPBF

Manufacturer:

Quantity:

50 000

Current page: 1 of 11
Download datasheet (197Kb)

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

• High short circuit rating optimized for motor control,

• Combines low conduction losses with high

• Tighter parameter distribution and higher efficiency

• IGBT co-packaged with HEXFRED

Benefits

• Latest generation 4 IGBT's offer highest power density

• HEXFRED

Thermal Resistance

Absolute Maximum Ratings

www.irf.com

Features

Minimized recovery characteristics reduce noise, EMI and

ultrasoft recovery antiparallel diodes

switching losses

STG

switching speed

than previous generations

motor controls possible

CES

@ T

=10µs, V

= 15V

= 100°C

= 25°C

= 100°C

= 25°C

= 100°C

diodes optimized for performance with IGBTs.

= 720V , T

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

Parameter

= 125°C,

ultrafast,

n-ch an nel

Min.

–––

300 (0.063 in. (1.6mm) from case)

IRG4PH20KD

10 lbf•in (1.1 N•m)

-55 to +150

TO-247AC

Max.

6 (0.21)

1200

± 20

5.0

Typ.

0.24

–––

Short Circuit Rated

CE(on) typ.

UltraFast IGBT

CES

= 15V, I

Max.

–––

= 1200V

2.1

3.5

= 3.17V

PD- 91777

= 5.0A

Units

g (oz)

°C/W

µs

°C

6/25/98

Related parts for IRG4PH20KDPBF

IRG4PH20KDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, t =10µ 720V , T = 125° 15V GE • Combines low conduction losses ...

Page 2

IRG4PH20KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...

Page 3

rate d volta 0.1 Fig Typical Load Current vs. ...

Page 4

IRG4PH20KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 5

1MHz ies res oes ce gc 600 C ies 400 200 C oes C res 0 ...

Page 6

IRG4PH20KD 4 5.0Ohm 150 C ° 960V 800V 15V 3.2 GE 2.4 1.6 0.8 0 Collector Current (A) C Fig Typical ...

Page 7

5 ° ...

Page 8

IRG4PH20KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

Figure 18e. Macro Waveforms for 50V µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com ...

Page 10

IRG4PH20KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. Case Outline - ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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