IRG4PH20KDPBF International Rectifier, IRG4PH20KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH20KDPBF
• Description: IGBT W/DIODE 1200V 11A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH20KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.3V @ 15V, 5A
• Current - Collector (ic) (max): 11A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 11A
• Collector Emitter Voltage Vces: 3.17V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH20KDPBF

Switching Characteristics @ T
IRG4PH20KD
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
fe
E
V
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ge
gc
ies
oes
res
g
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.5
2.3
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.13
3.17
4.04
2.84
0.62
0.30
0.92
620
183
100
250
110
435
285
380
307
-10
3.5
2.5
2.2
4.4
1.6
8.3
6.0
7.0
—
—
28
12
50
30
50
30
13
44
51
68
—
—
—
—
±100
1000
250
150
380
102
274
427
4.3
6.5
2.9
2.6
6.6
1.2
9.0
43
18
—
—
77
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
V
ns
µs
ns
pF
ns
V
V
S
A
and diode reverse recovery
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
Energy losses include "tail"
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
= 5.0A
= 11A
= 5.0A, T
= 5.0A
= 5.0A, T
= 5.0A
= 5.0A, V
= 5.0A, V
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
C
J
J
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
Conditions
= 250µA
= 2.5mA
See Fig.
See Fig.
= 150°C
= 150°C
G
G
G
C
= 250µA
= 1mA
J
= 800V
= 800V
= 1200V
= 1200V, T
= 50
= 50
= 50 ,
= 5.0A
= 125°C
14
15
17
16
See Fig. 10,11,18
See Fig.8
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
R
J
I
F
= 150°C
= 200V
= 5.0A
= 15V