PMEG6010CEJ,115 NXP Semiconductors, PMEG6010CEJ,115 Datasheet - Page 8

• Manufacturer Part Number: PMEG6010CEJ,115
• Description: SCHOTTKY RECT 60V 1A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010CEJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 660mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 68pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4138-2; 934059512115; PMEG6010CEJ T/R; PMEG6010CEJ T/R

NXP Semiconductors
12. Revision history
Table 10.
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Document ID
PMEG6010CEH_PMEG6010CEJ_
2
Modifications:
PMEG6010CEJ_1
Revision history
Release date
20070327
20060414
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new
identity guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PMEG6010CEH added
Section 1.1 “General
Table 1 “Product
Table 7 “Thermal
Section 8 “Test
PMEG6010CEH; PMEG6010CEJ
Rev. 02 — 27 March 2007
Data sheet status
Product data sheet
Product data sheet
information”: added
overview”: added
characteristics”:
description”: amended
1 A very low V
Table note 1
F
Change notice
-
-
MEGA Schottky barrier rectifiers
amended
© NXP B.V. 2007. All rights reserved.
Supersedes
PMEG6010CEJ_1
-
8 of 10