PMEG6010CEJ,115 NXP Semiconductors, PMEG6010CEJ,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG6010CEJ,115
• Description: SCHOTTKY RECT 60V 1A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010CEJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 660mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 68pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4138-2; 934059512115; PMEG6010CEJ T/R; PMEG6010CEJ T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
[3]
[4]
Symbol
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
R
tot
th(j-a)
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
Limiting values
Thermal characteristics
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
PMEG6010CEH
PMEG6010CEJ
PMEG6010CEH
PMEG6010CEJ
PMEG6010CEH
PMEG6010CEJ
PMEG6010CEH
PMEG6010CEJ
R
are a significant part of the total power losses.
PMEG6010CEH; PMEG6010CEJ
Rev. 02 — 27 March 2007
1 A very low V
Conditions
in free air
Conditions
T
t
square wave;
t
T
p
p
sp
amb
= 8 ms
0.25
1 ms;
55 C
25 C
F
MEGA Schottky barrier rectifiers
[1]
[2]
[3]
[2]
[3]
[4]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
60
1
7
9
10
375
830
350
830
150
+150
+150
Max
330
150
350
150
60
55
Unit
V
A
A
A
A
mW
mW
mW
mW
2
2
.
.
C
C
C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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