PMEG6010CEJ,115 NXP Semiconductors, PMEG6010CEJ,115 Datasheet - Page 5

• Manufacturer Part Number: PMEG6010CEJ,115
• Description: SCHOTTKY RECT 60V 1A SOD323F
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010CEJ,115

• Package / Case: SC-90, SOD-323F
• Voltage - Forward (vf) (max) @ If: 660mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 68pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4138-2; 934059512115; PMEG6010CEJ T/R; PMEG6010CEJ T/R

NXP Semiconductors
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values
(mA)
(1) T
(2) T
(3) T
(4) T
(5) T
I
10
F
10
10
10
10
1
4
3
2
1
voltage; typical values
f = 1 MHz; T
0.0
amb
amb
amb
amb
amb
(1)
(2)
(3)
(4)
(5)
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
0.2
amb
= 25 C
0.4
(pF)
C
120
d
80
40
0.6
0
0
006aaa758
V
F
(V)
PMEG6010CEH; PMEG6010CEJ
0.8
Rev. 02 — 27 March 2007
20
Fig 2. Reverse current as a function of reverse
( A)
I
1 A very low V
R
(1) T
(2) T
(3) T
(4) T
40
10
10
10
10
10
10
10
10
10
1
5
4
3
2
1
2
3
4
voltage; typical values
0
amb
amb
amb
amb
V
R
006aaa760
(V)
= 125 C
= 85 C
= 25 C
= 40 C
60
F
MEGA Schottky barrier rectifiers
20
(1)
(2)
(3)
(4)
40
© NXP B.V. 2007. All rights reserved.
V
R
006aaa759
(V)
60
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