BAV99LT1G ON Semiconductor, BAV99LT1G Datasheet - Page 3

• Manufacturer Part Number: BAV99LT1G
• Description: DIODE SWITCH SS DUAL 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAV99LT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 2.5µA @ 70V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance, Junction: 1.5 pF
• Configuration: Dual
• Current, Forward: 215 mA
• Current, Surge: 500 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -60 to +150 °C
• Time, Recovery: 6 ns
• Voltage, Forward: 1250 mV
• Voltage, Reverse: 70 V
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 70V
• Avg. Forward Curr (max): 0.715A
• Rev Curr: 2.5uA
• Peak Non-repetitive Surge Current (max): 2A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV99LT1GOSTR

A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
PACKAGE DIMENSIONS
0.031
SOLDERING FOOTPRINT*
VIEW C
0.8
L1
SOT−23 (TO−236)
L
CASE 318−08
BAV99LT1
ISSUE AN
q
0.25
c
4
SCALE 10:1
NOTES:
0.037
0.95
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
STYLE 11:
0.079
DIM
H
inches
A1
L1
A
D
b
c
E
e
L
PIN 1. ANODE
2.0
mm
E
2. CATHODE
3. CATHODE−ANODE
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.047
0.070
0.004
0.014
0.083
0.110
MIN
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX