BAV99LT1G ON Semiconductor, BAV99LT1G Datasheet
BAV99LT1G
Manufacturer Part Number
BAV99LT1G
Description
DIODE SWITCH SS DUAL 70V SOT23
Manufacturer
ON Semiconductor
Specifications of BAV99LT1G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Capacitance, Junction
1.5 pF
Configuration
Dual
Current, Forward
215 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-60 to +150 °C
Time, Recovery
6 ns
Voltage, Forward
1250 mV
Voltage, Reverse
70 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.715A
Rev Curr
2.5uA
Peak Non-repetitive Surge Current (max)
2A
Forward Voltage
1.25V
Operating Temp Range
-65C to 150C
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV99LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV99LT1G
Manufacturer:
ON
Quantity:
12 000
Company:
Part Number:
BAV99LT1G
Manufacturer:
ON
Quantity:
2 450
Company:
Part Number:
BAV99LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
BAV99LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV99LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BAV99LT1G / BAV99
Manufacturer:
ON/安森美
Quantity:
20 000
BAV99LT1
Dual Series
Switching Diode
Features
•
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Pb−Free Packages are Available
(averaged over any 20 ms period)
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
FR−5 Board (Note 1) T
Derate above 25°C
Alumina Substrate (Note 2)
T
Derate above 25°C
Temperature Range
A
= 25°C
Characteristic
Rating
(Each Diode)
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
V
I
R
R
I
I
J
F(AV)
FRM
FSM
V
P
P
RRM
, T
I
qJA
qJA
F
R
D
D
stg
−65 to
Value
+150
Max
215
500
715
450
225
556
300
417
2.0
1.0
0.5
1.8
2.4
70
70
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
mA
mA
°C
V
A
BAV99LT1G
†For information on tape and reel specifications,
BAV99LT1
BAV99LT3
BAV99LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
ANODE
1
ORDERING INFORMATION
A7 = Specific Device Code
M
G
(Note: Microdot may be in either location)
1
2
MARKING DIAGRAM
= Date Code
= Pb−Free Package
CATHODE/ANODE
(Pb−Free)
(Pb−Free)
1
Package
SOT−23
SOT−23
SOT−23
SOT−23
3
A7 MG
3
G
CASE 318
STYLE 11
10,000/Tape & Reel
10,000/Tape & Reel
SOT−23
3000/Tape & Reel
3000/Tape & Reel
CATHODE
Shipping
2
†
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BAV99LT1G Summary of contents
Page 1
... Symbol Max Unit P 225 mW D 1.8 mW/°C °C/W 556 R qJA P 300 mW D BAV99LT1 BAV99LT1G 2.4 mW/°C °C/W R 417 qJA BAV99LT3 ° − stg BAV99LT3G +150 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...
Page 2
OFF CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode) A Characteristic Reverse Breakdown Voltage, = 100 mA) (I (BR) Reverse Voltage Leakage Current Vdc Vdc Vdc, T ...
Page 3
... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BAV99LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...