BAV99LT1G ON Semiconductor, BAV99LT1G Datasheet - Page 2

• Manufacturer Part Number: BAV99LT1G
• Description: DIODE SWITCH SS DUAL 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAV99LT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 2.5µA @ 70V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance, Junction: 1.5 pF
• Configuration: Dual
• Current, Forward: 215 mA
• Current, Surge: 500 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -60 to +150 °C
• Time, Recovery: 6 ns
• Voltage, Forward: 1250 mV
• Voltage, Reverse: 70 V
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 70V
• Avg. Forward Curr (max): 0.715A
• Rev Curr: 2.5uA
• Peak Non-repetitive Surge Current (max): 2A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV99LT1GOSTR

OFF CHARACTERISTICS
Reverse Breakdown Voltage,
Reverse Voltage Leakage Current,
Diode Capacitance,
Forward Voltage,
Reverse Recovery Time,
Forward Recovery Voltage,
1000
100
0.1
10
1
0
T
T
A
A
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
= 55°C
= 25°C
T
T
A
A
= 85°C
= 125°C
Figure 1. Forward Voltage
V
F
, FORWARD VOLTAGE (V)
T
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(T
(I
A
(BR)
F
F
F
F
F
F
R
R
R
R
A
= 150°C
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= I
= 10 mA, t
= 25°C unless otherwise noted) (Each Diode)
= 70 Vdc)
= 25 Vdc, T
= 70 Vdc, T
= 0, f = 1.0 MHz)
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
Characteristic
R
= 100 mA)
= 10 mAdc, i
0
CURVES APPLICABLE TO EACH DIODE
r
= 20 ns)
J
J
= 150°C)
= 150°C)
1
T
T
R(REC)
A
A
= −55°C
= −40°C
Figure 3. Capacitance
V
2
R
http://onsemi.com
= 1.0 mAdc) R
, REVERSE VOLTAGE (V)
1.1 1.2
3
2
4
L
0.001
= 100 W
0.01
100
1.0
0.1
10
5
0
6
10
7
Symbol
Figure 2. Leakage Current
V
V
V
T
R
C
V
(BR)
I
t
A
20
FR
, REVERSE VOLTAGE (V)
R
rr
D
F
= 150°C
8
30
Min
T
70
T
−
−
−
−
−
−
−
−
−
−
A
A
= 125°C
T
40
T
= 55°C
A
A
= 25°C
= 85°C
1000
1250
Max
1.75
50
715
855
2.5
1.5
6.0
30
50
−
60
mVdc
mAdc
Unit
Vdc
pF
ns
V
70