BLF573S NXP Semiconductors, BLF573S Datasheet - Page 4

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
7. Application information
BLF573S_2
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLF573S is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: V
I
Table 8.
Measured Z
f
MHz
225
Dq
Fig 1.
Fig 2.
= 900 mA; P
V
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
Definition of transistor impedance
GS
Typical impedance
S
and Z
= 0 V; f = 1 MHz.
L
= 300 W; f = 225 MHz.
L
test circuit impedances.
C
Rev. 02 — 17 February 2009
(pF)
oss
800
600
400
200
0
0
Z
0.7 + j2.0
S
10
gate
Z
S
20
001aaf059
30
Z
drain
L
HF / VHF power LDMOS transistor
40
001aaj141
V
DS
(V)
Z
1.95 + j2.0
L
50
DS
BLF573S
= 50 V;
© NXP B.V. 2009. All rights reserved.
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