BLF573S NXP Semiconductors, BLF573S Datasheet - Page 10

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
BLF573S_2
Product data sheet
Fig 10. Component layout for class-AB production test circuit
C1
C2
C3
C4
C5
Rev. 02 — 17 February 2009
C7
C6
C9
C8
R1
L1
C20
B1
C10
C13
C11 C12
C19
HF / VHF power LDMOS transistor
C14
C15
BLF573S
© NXP B.V. 2009. All rights reserved.
L2
C16
C17
001aaj149
10 of 14
C18