BLF573S NXP Semiconductors, BLF573S Datasheet - Page 2

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF573S_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
Type number
BLF573S
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from
junction to case
Description
drain
gate
source
Package
Name
-
Rev. 02 — 17 February 2009
Description
earless flanged LDMOST ceramic package, 2 leads
Conditions
Conditions
T
case
= 80 C; P
[1]
Simplified outline
L
HF / VHF power LDMOS transistor
= 300 W
1
2
3
[1]
Graphic symbol
Min
-
-
-
BLF573S
Typ
0.21
© NXP B.V. 2009. All rights reserved.
0.5
65
2
Max
110
+11
42
+150
225
sym112
Version
SOT502B
1
3
Unit
K/W
2 of 14
Unit
V
V
A
C
C